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Central Semiconductor Schottky Diode CMSSH-3SE
The following four products from Centra Semiconductor are optimal devices for the "LiDAR" in autonomous driving systems and are adopted by overseas LiDAR manufacturers.
![[Analysis Case] SiC by SIMS](https://image.mono.ipros.com/public/product/image/235/2000244338/IPROS1446214273548249992.jpg?w=280&h=280)
Imaging SIMS allows for the evaluation of localized elements.
We disassembled a commercially available SiC Schottky diode and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant element Al in a 40μm square area to a depth of 0.5μm. From the data processing after the imaging SIMS measurements, we extracted the depth-wise concentration distribution of Al localized within the sample surface and present a case study comparing the concentration distributions for each pattern.
- Zero-bias Schottky diode - Output signal optimized for terahertz power - Ideal for terahertz imaging
- Zero-bias Schottky diode - Output signal optimized for terahertz power - Ideal for terahertz imaging - Two versions: high sensitivity / wide bandwidth - The ultra-fast version enables measurement of all THz pulses
Central Semiconductor Schottky Diode CMOSH-4E
The following four products from Centra Semiconductor are optimal devices for the "LiDAR" in autonomous driving systems and have been adopted by overseas LiDAR manufacturers.
